elektronische bauelemente 2N3906 -0.2a, -40v pnp general purpose transistor 31-dec-2010 rev.b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c e k f d b g h j 2 base 1 emitter collector 3 rohs compliant product a suffix of -c specifies halogen and lead free features power dissipation p cm : 625mw (ta=25 c) collector current i cm : -200ma collector C base voltage v (br)cbo : -40v classification of h fe(1) product-rank 2N3906-o 2N3906-y 2N3906-g range 100~200 200~300 300~400 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo -40 v collector - emitter voltage v ceo -40 v emitter - base voltage v ebo -5 v collector current -continuous i c -0.2 a cpllector power dissipation p c 625 mw junction, storage temperature t j , t stg +150, -55 ~ +150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -40 - - v i c =-10 a, i e =0 collector-emitter breakdown voltage v (br)ceo -40 - - v i c =-1ma, i b =0 emitter - base breakdown voltage v (br)ebo -5 - - v i e =-100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb =-40v, i e =0 collector cut-off current i cex -50 n a v ce =-30v, v be(off) =-3v emitter cut-off current i ebo - - -0.1 a v eb =-5v, i c =0 h fe(1) 100 - 400 v ce =-1v, i c =-10ma dc current gain h fe(2) 60 - - v ce =-1v, i c =-50ma collector-emitter saturation voltage v ce(sat) - - -0.4 v i c =-50ma, i b =-5ma base-emitter saturation voltage v be(sat) - - -0.95 v i c =-50ma, i b =-5ma transition frequency f t 250 - - mhz v ce =-20v, i c =-10ma, f=100mhz to-92 millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1. 10 - j 2.42 2.66 k 0.36 0.76 1 11 1 emitter 2 22 2 base 3 33 3 collector
elektronische bauelemente 2N3906 -0.2a, -40v pnp general purpose transistor 31-dec-2010 rev.b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente 2N3906 -0.2a, -40v pnp general purpose transistor 31-dec-2010 rev.b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually.
|
